Development of a wurtzite (Al,Ti)N thermistor on a resin substrate with high heat resistance

We developed a thin-film nitride thermistor on resin substrate with high heat resistance by focusing the interface between polyimide (PI) and (Al,Ti)N film. Heat properties of thermistors are degraded an amorphous oxynitride layer PI that forms during initial stage sputtering. propose introduction inorganic insulating underlayer at to prevent formation phase. As result, highly crystalline was grown directly achieved.